2

Abstract Novel materials suitable for optoelectronics are of great interest due to limited and diminishing energy resources and the movement toward a green earth. We report a simple film growth method to tune the S composition, x from 1 to 2 in semiconductor ultrathin SnSx films on quartz substrates, that is, single phase SnS, single phase SnS2, and mixed phases of both SnS and SnS2 by varying the sulfurization temperature from 150 to 500 °C.

Abstract Remarkable properties of layered metal dichalcogenides and their potential applications in various fields have raised intense interest worldwide. We report tens of microns-sized ultrathin single crystal SnS2 flakes grown on amorphous substrates using a simple one-step thermal coevaporation process.